When you are in the market for top-quality NSN products like Semiconductor Device Diode items listed with the part number MMSZ3V3, we have you covered here on NSN Parts Dispatch. Manufactured by On Semiconductor Corporation and listed alongside the NSN 5961015768763, part number MMSZ3V3 is readily available for procurement on our website at any time. To learn more about this item or to initiate procurement, be sure to complete the RFQ form that we have provided below. Using offered information such as your target price or expected shipping time frame, we can best formulate a solution that closely caters to your unique needs and interests while offering a response in just 15 minutes or less.
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To make your search as simple as possible, we list every offering with as much applicable information as we can. For example, part number MMSZ3V3 with the NSN 5961-01-576-8763 is specially listed under FSC 5961 Semiconductor Devices and Associated Hardware. Furthermore, as this item is manufactured by On Semiconductor Corporation under CAGE Code 59PE1, you can determine the exact facility that it traces back to. With such information, you can always best ensure that you only procure the exact items you require for carrying out operations. If you are ready to initiate the purchasing process for this item, send us a completed RFQ form today or get in contact with a team member through phone or email!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-576-8763 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE | 5961 | 015768763 | N | A | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
A | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
99202490 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 3.7 MILLIMETERS MINIMUM |
ABKW | OVERALL HEIGHT | 1.1 MILLIMETERS NOMINAL |
ABMK | OVERALL WIDTH | 1.6 MILLIMETERS MINIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.3 BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN NANOAMPERES |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 BONDING PAD |
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